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BSIMSOI3 Modeling Package
Model Parameter Extraction for Submicron SOI Devices
The BSIMSOI3 Modeling Package offers a complete extraction strategy for the model parameters of UC Berkeley's BSIMSOI3.2 MOS model. The extraction routines are based on the device equations of BSIMSOI3.2 to ensure that the extracted model parameter set gives a good physical representation of the device characteristics. Therefore, no or only a minimum of optimization is needed to get a good fit between measured and simulated device behavior. Model parameters extracted in this way are the ideal starting point for further statistical analysis.
The BSIMSOI3 Modeling Package uses a group device extraction strategy
to cover geometry dependent effects over a wide range of device dimensions.
Special emphasis was put on the high frequency modeling of the transistor.
As an open software written in the IC-CAP Parameter Extraction Language
(PEL) the BSIMSOI3 Modeling Package can be adapted to your specific needs.
The BSIMSOI3 Modeling Package has been already applied to generate simulation models for devices down to a minimum feature size of 90nm as well as for high power devices.
Download detailed data sheet of the BSIMSOI3 Modeling Package:
Download detailed data sheet of the BSIMSOI Modeling Package:
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