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BSIM3v3
BSIM3v3 Modeling Package


Benefits of the BSIM3v3 Modeling Package

The BSIM3v3 Modeling Package, developed within the IC-CAP framework, contains extraction routines for the latest release of the U.C. Berkeley BSIM3v3.2.4 MOS model.

It provides a flexible, user configurable extraction strategy, which has been proven by AdMOS through a large variety of applications down to the 130nm CMOS process generation.
It has automated measurements and parameter extractions with predefined macros and setups.
Parameter extraction covers all group of BSIM3v3 parameters, such as the DC model, capacitance model (junction, intrinsic and extrinsic) and temperature behavior.
In addition, it also provides modeling methods for high-frequency effects and pre-configured macro models for all major commercial simulators.

Overall, the Agilent BSIM3v3 Modeling Package (W8553EP) offers an accurate, fast and easy-to-use solution for state-of-the-art CMOS modeling.


Download detailed datasheet of the BSIM3v3 Modeling Package


bsim3v3.pdf   196 K




RF Test

Required RF test structures as outlined in the manual





Sample Results

Sample results (measurement vs. simulation) of a BSIM3v3 RF macro model





Datasheet BSIM3v3

Datasheet BSIM3v3